Fixed Abrasive Pad with Self-conditioning in CMP Process
نویسندگان
چکیده
منابع مشابه
A Fixed Abrasive CMP Model
Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in both front-end (STI) and back-end (ILD) integrated circuit manufacturing. Conventional CMP processes utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. More recent work has examined the use of a fixed abrasive CMP pad [1], in which abrasive material is embedded...
متن کاملStudy on Stiffness and Conditioning Effects of CMP Pad Based on Physical Die-Level CMP Model
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متن کاملAdvances in the CMP Process on Fixed Abrasive Pads for the Polishing of SOI-Substrates with High Degree of Flatness
The new approach using Fixed Abrasive (FA) pads for polishing thick film Silicon-onInsulator (SOI) wafers after bonding and grinding process [1] has been further developed. The aim is a practicable industrial manufacturing process, where the major specifications especially in long term stability and removal rate should be achieved. In base line studies a stable removal rate on suitable level ha...
متن کاملA Novel CMP Process on Fixed Abrasive Pads for the Manufacturing of Highly Planar Thick Film SOI Substrates
A new approach using Fixed Abrasive (FA) pads has been undertaken to overcome the problem of non-uniform thick film Silicon-on-Insulator (SOI) wafers after CMP polishing. The theoretical models indicating the advantages of the 2-body system of the fixed abrasive configuration vs. the conventional 3-body system of slurry based polishing have been convincingly demonstrated in practise upon experi...
متن کاملIntegration of CMP Fixed Abrasive Polishing into the Manufacturing of Thick Film SOI Substrates
The specification for the total thickness variation (TTV) of the device layers on thick-film silicon on insulator (SOI) wafers tighten for future applications. Therefore, the bulk removal polishing process of current technology after grinding cannot meet the demands in terms of flatness. The currently required amount of material removal for polishing out the induced sub surface damage (SSD) of ...
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ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2005
ISSN: 1226-7945
DOI: 10.4313/jkem.2005.18.4.321